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| DMN601VK Lead-free Green DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR NEW PRODUCT Features * * * * * * * * * * Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Lead Free By Design/RoHS Compliant (Note 2) ESD Protected Up To 2kV "Green" Device (Note 4) D G BC A SOT-563 Dim A B C D G H K L M H L Drain Min 0.15 1.10 1.55 0.90 1.50 0.56 0.10 0.10 Max 0.30 1.25 1.70 0.50 1.10 1.70 0.60 0.30 0.18 Typ 0.25 1.20 1.60 1.00 1.60 0.60 0.20 0.11 Mechanical Data * * * * * * * * Case: SOT-563 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals Connections: See Diagram Terminals: Finish - Matte Tin annealed over Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208 Marking: See Page 2 Ordering & Date Code Information: See Page 2 Weight: 0.006 grams (approximate) K M All Dimensions in mm D2 G1 S1 Body Diode Gate S2 G2 D1 Gate Protection Diode ESD protected up to 2kV Source EQUIVALENT CIRCUIT PER ELEMENT Maximum Ratings Drain-Source Voltage Gate-Source Voltage Drain Current (Note 1) @ TA = 25C unless otherwise specified Characteristic Symbol VDSS VGSS Continuous Pulsed (Note 3) ID Pd RJA Tj, TSTG Value 60 20 305 800 250 500 -65 to +150 Units V V mA mW C/W C Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Note: 1. Device mounted on FR-4 PCB. 2. No purposefully added lead. 3. Pulse width 10S, Duty Cycle 1%. 4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. DS30655 Rev. 2 - 2 1 of 4 www.diodes.com DMN601VK (c) Diodes Incorporated NEW PRODUCT Electrical Characteristics Characteristic OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transfer Admittance Diode Forward Voltage (Note 5) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Notes: @ TA = 25C unless otherwise specified Symbol BVDSS IDSS IGSS Min 60 1.0 0.5 Typ 1.6 284 Max 250 200 50 2.5 2.0 3.0 1.4 50 25 5.0 Unit V nA nA Test Condition VGS = 0V, ID = 10A VDS = 50V, VGS = 0V VGS = 10V, VDS = 0V VGS = 5V, VDS = 0V VDS = VGS, ID = 250A VGS = 10V, ID = 0.5A VGS = 4.5V, ID = 200mA VDS =10V, ID = 0.2A VGS = 0V, IS = 115mA VGS(th) RDS (ON) |Yfs| VSD Ciss Coss Crss V ms V pF pF pF VDS = 25V, VGS = 0V f = 1.0MHz 5. Short duration test pulse used to minimize self-heating effect. 1.4 VGS = 10V 8V 6V 5V 4V 3V 1.00 10V 8V 6V VDS = 10V Pulsed 1.2 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 1.0 5V TA = 125C 0.8 4V 0.10 TA = 75C 0.6 0.4 TA = 25C 0.2 3V TA = -25C 0 0 1 2 3 4 5 0.01 1 1.5 2 2.5 3 3.5 4 4.5 5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristics 10 VGS = 10V Pulsed TA = 125C TA = 150C 2 VGS(th), GATE THRESHOLD VOLTAGE (V) VDS = 10V ID = 1mA Pulsed 1.5 TA = 85C 1 1 TA = -55C 0.5 TA = 25C TA = 0C TA = -25C 0 -50 -25 0 25 50 75 100 125 150 Tch, CHANNEL TEMPERATURE (C) Fig. 3 Gate Threshold Voltage vs. Channel Temperature 0.1 0.001 0.1 0.01 ID, DRAIN CURRENT (A) Fig. 4 Static Drain-Source On-Resistance Vs. Drain Current 1 DS30655 Rev. 2 - 2 2 of 4 www.diodes.com DMN601VK 10 7 VGS = 5V Pulsed TA = 125C TA = 150C TA = 85C NEW PRODUCT 6 ID = 300mA TA = 25C Pulsed 5 4 1 TA = -55C TA = 0C 3 2 ID = 150mA TA = 25C TA = -25C 1 0.1 0.001 0.01 0.1 1 0 0 2 4 6 8 10 12 14 16 18 20 VGS, GATE SOURCE VOLTAGE (V) Fig. 6 Static Drain-Source On-Resistance vs. Gate-Source Voltage 1 VGS = 0V Pulsed 2.5 ID, DRAIN CURRENT (A) Fig. 5 Static Drain-Source On-Resistance vs. Drain Current VGS = 10V Pulsed ID = 300mA 2 ID = 150mA IDR, REVERSE DRAIN CURRENT (A) TA = 125C TA = 150C 0.1 TA = 85C 1.5 TA = 25C 1 0.01 TA = 0C 0.5 TA = -25C TA = -55C 0 -75 -50 -25 0 25 50 75 100 125 150 0.001 0 0.5 1 1.5 Tch, CHANNEL TEMPERATURE (C) Fig. 7 Static Drain-Source On-State Resistance vs. Channel Temperature |Yfs|, FORWARD TRANSFER ADMITTANCE (S) 1 IDR, REVERSE DRAIN CURRENT (A) VGS = 10V 1 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Reverse Drain Current vs. Source-Drain Voltage VGS = 10V Pulsed TA= 25C Pulsed TA = 25C 0.1 0.1 TA = -55C TA = 150C 0.01 VGS = 0V TA = 85C 0.01 0.001 0 0.5 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 9 Reverse Drain Current vs. Source-Drain Voltage 1 0.001 0.001 0.01 0.1 1 ID, DRAIN CURRENT (A) Fig.10 Forward Transfer Admittance vs. Drain Current DS30655 Rev. 2 - 2 3 of 4 www.diodes.com DMN601VK NEW PRODUCT Ordering Information Device DMN601VK-7 Notes: (Note 6) Packaging SOT-563 Shipping 3000/Tape & Reel 6. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information D2 G1 S1 K7K YM S2 G2 D1 K7K = Marking Code YM = Date Code Marking Y = Year ex: S = 2005 M = Month ex: 9 = September Date Code Key Year Code Month Code Jan 1 Feb 2 March 3 2005 S Apr 4 May 5 2006 T Jun 6 Jul 7 2007 U Aug 8 Sep 9 2008 V Oct O Nov N 2009 W Dec D DS30655 Rev. 2 - 2 4 of 4 www.diodes.com DMN601VK |
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